用等离子体化学气相沉积(PCVD)制备掺杂和本征的a-Si:H薄膜,用固相晶化法制备多晶硅薄膜。通过X射线衍射分析多晶硅的晶粒大小与a-Si:H的沉积条件及退火条件的关系,测量了多晶硅薄膜的室温暗电导率和光能隙,讨论了影响暗电导率和光能隙的因素。 Doping and intrinsic a-Si: H films were prepared by plasma CVD (PCVD), and polycrystalline silicon thin films were prepared by solid-state crystallization. The dark conductivity and the optical energy gap of polycrystalline silicon thin films were measured by X-ray diffraction analysis of the grain size of polycrystalline silicon and the deposition conditions and annealing conditions of a-Si: H. The factors affecting the dark conductivity and the optical energy gap were discussed.