论文部分内容阅读
本文用透射电子显微镜观察了SiO_2/Si衬底上化学金相沉积多晶硅层经硼离子注入,再由Q-Nd∶YAG激光或二氧化碳激光或热处理退火后晶粒的变化。激光退火多晶硅的晶粒可由500A长大为7μm×3μm以上。本文并着重介绍了激光退火多晶硅的电镜试样的制备方法。
In this paper, the changes of the crystal grains of the chemical vapor deposited polysilicon layer on the SiO 2 / Si substrate after being implanted by boron ions on the SiO 2 / Si substrate and then annealed by the Q-Nd: YAG laser or the carbon dioxide laser were observed by transmission electron microscopy. The laser annealed polycrystalline silicon grains grow from 500 A to 7 μm × 3 μm or more. This article focuses on the laser annealing polycrystalline silicon electron microscopy sample preparation method.