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研究由MOCVD技术制备的GaMnN外延薄膜光吸收谱.实验发现Mn掺杂后较未掺杂GaN吸收系数在近紫外区增加,在吸收谱低能区1.44eV附近观察到吸收峰,吸收系数随Mn浓度的增加而增大.实验结果与基于密度泛函理论的第一性原理计算结果一致,结合理论计算分析认为1.44eV附近的吸收峰源于Mn3+离子e态与t2态间的带内跃迁5T2→5E.
The optical absorption spectra of GaMnN epitaxial films prepared by MOCVD technique were investigated. The results showed that the absorption coefficient of GaN increases with the increase of the undoped GaN in the near ultraviolet region and the absorption peak near 1.44eV in the low energy region of absorption spectrum. The absorption coefficient varies with the Mn concentration The experimental results are consistent with the first-principles calculations based on density functional theory. The theoretical calculations show that the absorption peak near 1.44eV is due to the transition 5T2 → 5T2 between the e and t2 states of Mn3 + 5E.