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研究了采用硅片粘接和先用金刚石研磨、然后用非接触抛光的腐蚀方法(BE-SOI)制作薄膜SOI的制造工艺和这种膜的缺陷特性。制作了一些MOS器件,并测试了它们在辐射前后的电特性。采用TEM进行的分析表明。、这种BESOI膜无缺陷。CMOS器件具有很高的迁移率和很低的漏电流(小于1.0pA/微米)。这些器件的上表面和边缘的氧化层的辐射响应与体硅器件相近。在10兆拉德(SiO_2)剂量的辐射下,正电荷俘获和界面陷阱产生分别为-0.8和0.8V。
The fabrication process of thin-film SOI and the defect characteristics of the film using silicon-bonded and first diamond-polished and then non-contact polished etching method (BE-SOI) were investigated. Some MOS devices were fabricated and tested for their electrical properties before and after radiation. Analysis using TEM shows. This BESOI film is defect-free. CMOS devices have high mobility and low leakage current (less than 1.0pA / micron). The radiation response of the oxide layer on the upper surface and the edge of these devices is similar to bulk silicon devices. At a 10 Mrad dose, positive charge trapping and interface traps yield -0.8 and 0.8 V, respectively.