一、前言在半导体基片中扩散杂质形成能导电的载流子,从而形成P-n结的技术已经由来已久了,近年来,随着器件的复杂化和IC设计规则向微米及亚微米靠近,对杂质扩散的要求也提高了,对于扩散深度、载流子浓度和深度方向的浓度分布都要求有精密的制控。除了扩散的方法以外,离子注入对于Si和Ⅲ-Ⅴ族化合物的掺杂也是经常采用的方法。离子注入掺杂可以根据离子的加速能量和离子剂量, I. INTRODUCTION The technology of diffusing impurities in a semiconductor substrate to form conductive carriers to form a Pn junction has been in existence for a long time. In recent years, with the complication of the device and the IC design rules approaching to the micrometer and the submicron, The requirements for the diffusion of impurities are also raised. Precise control is required for the depth of diffusion, concentration of carriers in the depth direction, and density distribution in the depth direction. In addition to the diffusion method, ion implantation is also commonly used for doping Si and III-V compounds. Ion implantation doping can be based on the ion acceleration energy and ion dose,