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采用活性反应离子镀装置，通过电子束蒸镀金属纯硼，在氮、氩混合气体等离子体中，合成了ｃ－ＢＮ膜。对沉积后的ｃ－ＢＮ膜，在充入高纯氮的条件下，原位进行消应力退火处理以提高膜与基体的结合力。用富立叶变换红外透射谱分析ｃ－ＢＮ膜的结构，用弯曲法测量膜的残余压应力，通过划痕试验测量膜与基体的结合力。沉积态的 ｃ－ＢＮ膜的残余压应力高达６．６ ＧＰａ，当退火温度不超过６００℃时，膜的残余压应力消减效果不大；但当经８００℃退火 １ｈ后，ｃ－ＢＮ膜的残余压应力大幅度下降，降到约 ２ ＧＰａ，膜与基体的结合力有很大提高，划痕试验时临界载荷高达 １４ Ｎ；而富立叶变换红外分析结果表明，高温退火不改变ｃ－ＢＮ膜的相结构。
Using an active reactive ion plating apparatus, c-BN film was synthesized by vapor deposition of pure metallic boron by electron beam in a plasma of nitrogen and argon mixed gas. The deposited c-BN film, filled with high-purity nitrogen conditions, in situ stress relief annealing treatment to improve the binding force of the film and the substrate. The structure of the c-BN film was analyzed by Fourier transform infrared transmission spectroscopy, the residual compressive stress of the film was measured by a bending method, and the binding force between the film and the substrate was measured by a scratch test. The residual compressive stress of the as-deposited c-BN film is as high as 6.6 GPa. When the annealing temperature does not exceed 600 ℃, the residual compressive stress of the c-BN film is not significantly reduced. However, when annealed at 800 ℃ for 1 h, The residual compressive stress decreased significantly to about 2 GPa, the binding force between the film and the substrate greatly increased, and the critical load was as high as 14 N in the scratch test. The Fourier transform infrared analysis showed that the high temperature annealing did not change the c- BN film phase structure.