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用开管汽相外延生长系统,在CdTe衬底上汽相等温外延生长了碲镉汞Hg_(1-x)Cd_xTe(MCT)外延层。外延用蒸发源为富Te的MCT多晶,CdTe和多晶源的温度为490～530℃,生长时间为6～10h,生长速率约为1μm/h;为精确控制MCT外延层的组分x值,在低温区另加一纯汞源,其温度在320～400℃范围内,载气为氢气。实验中所生长的MCT外延层成
The Hg_ (1-x) Cd_xTe (MCT) epitaxial layer was grown on the CdTe substrate by vapor phase isothermal epitaxy using an open tube vapor phase epitaxial growth system. The epitaxial evaporation source is Te-rich MCT polycrystalline. The temperature of the CdTe and polycrystalline source is 490-530 ° C., the growth time is 6-10 hours, and the growth rate is about 1 μm / h. In order to precisely control the composition of the MCT epitaxial layer x Value in the low temperature plus a pure source of mercury, the temperature in the range of 320 ~ 400 ℃, the carrier gas is hydrogen. Experimental growth of MCT epitaxial layer into