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本文介绍了一种单层多晶硅作基极和发射极接触的新型、高性能硅双极晶体管的实验结果,我们把这种结构叫做STRIPE(自对准开槽隔离多晶硅电极)。已提供的发射极/基极多晶硅接触的间隙为0.2μm,0.4μm的发射极宽度是用普通的0.8μm的光刻来完成的。在用多晶硅基极接触的单层多晶硅结构中,可达到的尺寸最小,并且与双层多晶硅结构相差不大,用STRIPE结构,制造出的晶体管的f_T高达33.8GHz。
This paper presents the experimental results of a new, high performance silicon bipolar transistor with single-layer polysilicon as the base and emitter contact. We call this structure STRIPE (Self-Aligned Slotted Isolated Polycrystalline Silicon Electrode). The gap between the emitter / base polysilicon contacts provided was 0.2 [mu] m and the emitter width of 0.4 [mu] m was done using a normal 0.8 [mu] m lithography. In the single-layer polycrystalline silicon structure with polysilicon base contact, the achievable size is the smallest and comparable to the double-layer polysilicon structure, with a STRIPE structure that produces a transistor of f_T of up to 33.8 GHz.