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在590℃温度下,不使用1.3μm GaInAsP 防回熔层,直接在 n-InP(100)衬底上液相外延生长出1.55μm InP/GaInAsP/InP 双异质结构外延片。对这种外延片的生长情况及其特性和 InP 衬底的热损伤情况,本文作了详细的分析和讨论。
A 1.55μm InP / GaInAsP / InP double heterostructure epitaxial wafer was directly epitaxially grown on the n-InP (100) substrate without the use of 1.3μm GaInAsP anti-melts at 590 ℃. This epitaxial wafer growth and its characteristics and InP substrate thermal damage, this paper made a detailed analysis and discussion.