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采用脉冲激光法 (PLD)在Si衬底上沉积Zn1 -xMgxO薄膜 .x射线衍射 (XRD)表明薄膜为c轴取向 ,(0 0 2 )峰的半高宽仅为 0 .2 11° ,且没有MgO的相偏析 .透射电子显微镜可以清楚看到Zn1 -xMgxO薄膜的c轴择优取向 .在选区电子衍射图中可以看到Zn1 -xMgxO结晶薄膜整齐的衍射斑点 .室温下对Zn1 -xMgxO薄膜进行了光致荧光光谱分析 ,发现其带边发射峰相对ZnO晶体有 0 .4eV的蓝移 ,带边发射峰与杂质发射峰的强度之比高达 15 9.Zn1 -xMgxO结晶薄膜质量良好 ,显示了应用于光电器件的潜力
Zn1-xMgxO thin films were deposited on Si substrate by pulsed laser method (PLD) .X-ray diffraction (XRD) showed that the film was c-axis oriented with a (002) No MgO phase segregation. Transmission electron microscopy can be clearly seen Zn1-xMgxO film c-axis preferred orientation in the selected area electron diffraction pattern can be seen Zn1-xMgxO crystalline film neat diffraction spot Zn1-xMgxO film at room temperature for the film According to the results of photoluminescence spectroscopy, it was found that the band edge emission peak has a blue shift of 0 4eV with respect to the ZnO crystal, and the ratio of the band edge emission peak to the impurity emission peak is as high as 159. The quality of the Zn1-xMgxO crystal thin film is good, Potential for use in optoelectronic devices