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用ＭＯＶＰＥ方法在蓝宝石衬底上生长了高纯氮化镓（ＧａＮ）外延材料。未掺杂ＧａＮ显ｎ型，室温下（３００Ｋ）背景电子浓度为１．６×１０１７ｃｍ－３，电子迁移率为３６０ｃｍ２／Ｖ．ｓ。在１９５Ｋ附近电子迁移率达到峰值，为４９０ｃｍ２／Ｖ．ｓ。发现了该材料中存在深施主能级，其离化能约为３８ｍｅＶ。
High-purity gallium nitride (GaN) epitaxial material was grown on a sapphire substrate by the MOVPE method. The undoped GaN was n-type. At room temperature (300K), the background electron concentration was 1.6 × 10 17 cm -3 and the electron mobility was 360 cm 2 / V. s. The electron mobility peaked at about 195K and was 490 cm2 / V. s. It is found that there is a deep donor level in this material with an ionization energy of about 38 meV.