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采用双离子束辅助沉积技术制备了原位Si掺杂的c-BN薄膜。系统研究了辅源轰击束流大小、辅源气体组分比以及衬底温度对制备薄膜的影响。结果表明,在掺入Si杂质后,要保持高立方相含量,必须增强辅源离子的轰击强度;随着辅源混合气体中Ar含量的增加,立方相含量也逐步增加;中等衬底生长温度既可以保持薄膜中高立方相含量以及较好的晶体质量,又不会导致薄膜中应力过大。电学测试则显现掺杂薄膜具有明显的半导体特性和非晶态半导体的电学输运性质。
In-situ Si-doped c-BN films were prepared by dual-ion assisted deposition technique. The effects of the bombardment beam size, the composition ratio of the auxiliary source gas and the substrate temperature on the prepared films were systematically studied. The results show that the bombardment strength of the auxiliary ions must be increased to maintain the high cubic phase content after the Si impurity is doped. The content of the cubic phase also gradually increases with the increase of the Ar content in the mixed source gas. The medium substrate growth temperature It not only can keep the content of high cubic phase and better crystal quality in the film, but also can not cause the stress in the film too much. Electrical tests show that the doped films have obvious semiconducting properties and electrical transport properties of amorphous semiconductors.