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This paper presents a high-precision intelligent flexible robot grasping front-end with an integrated capacitive tactile sensor array and a conditioning chip. The capacitive tactile sensor is the primary part of the front-end, it determines the overall performance. The micro-needle array sandwich structure in the tactile sensor increases the repeatability and stability, and ensures the sensitivity. The assembled sensor exhibits a saturation at 10.53 N(421 k Pa) with a sensitivity of 1.9%/k Pa. Furthermore, a conditioning chip is utilized in a custom readout interface to achieve better performance by reducing signal attenuation, and to increase the compatibility of the front-end. The chip is optimized for the parasitic shunt capacitance in the capacitor array. A dual bidirectional charge-discharge conversion method and a two-port detection method are matched to achieve the goal of reducing the shunting influence, and attenuating the offset voltage or the noise input effects. A prototype of the interface has been fabricated using 180-nm CMOS technology. Sensor with the value of 0.5 p F shunted by capacitors of 47 p F has been detected with an error of 1% within 100 μs.
This paper presents a high-precision intelligent flexible robot grasping front-end with an integrated capacitive tactile sensor array and a conditioning chip. The capacitive tactile sensor is the primary part of the front-end, it determines the overall performance. The micro-needle Array assembly structure in the tactile sensor increases the repeatability and stability, and ensures the sensitivity. The assembled sensor exhibits a saturation at 10.53 N (421 k Pa) with a sensitivity of 1.9% / kPa. a custom readout interface to achieve better performance by reducing signal attenuation, and to increase the compatibility of the front-end. The chip is optimized for the parasitic shunt capacitance in the capacitor array. A dual bidirectional charge-discharge conversion method and a two- port detection method are matched to achieve the goal of reducing the shunting influence, and attenuating the offset voltage or noise input effects. A prototype of the interface has been fabricated using 180-nm CMOS technology. Sensor with the value of 0.5 p F shunted by capacitors of 47 p F has been detected with an error of 1% within 100 μs.