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注入离子在硅中形成各种损伤,损伤把完整晶体分隔成许多小晶粒和大晶块.本工作用喇曼光谱方法结合阳极氧化剥层技术测量了注B~+硅片的特征喇曼峰强度与硅片表面被剥厚度的关系,由此分析得到了损伤层中损伤、折射率、消光系数、小晶粒和大晶块的纵向分布,并将其中的损伤、折射率和消光系数分布与他人的理论计算及其他方法所测结果进行了比较,对其它方法不能测得的小晶粒和大晶块分布给予了定性解释.
Injecting ions form various damage in silicon, the damage divides the complete crystal into many small grains and large clumps.In this work, Raman spectroscopy combined with anodic oxidation delamination technique was used to measure the Raman The relationship between the peak intensity and the peeled thickness of the silicon surface was analyzed. The damage, index of refraction, extinction coefficient, longitudinal distribution of small crystal grains and large cakes in the damaged layer were analyzed. The damage, refractive index and extinction coefficient Distribution and other people’s theoretical calculations and other methods measured results were compared to other methods can not be measured on the distribution of small grains and large clumps to give a qualitative explanation.