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本专利提供一种用于生产氮化镓化合和半导体的方法,该方法包括以下几个步骤: 在第一温度范围内,在衬底上形成一层多晶氮化层;在第二温度范围内,在该氮化层上形成
This patent provides a method for producing gallium nitride compounds and semiconductors which comprises the steps of forming a polycrystalline nitride layer on a substrate in a first temperature range, Formed on the nitride layer