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我们介绍了一种非常简单的退火系统。这个系统仅使用二只150W卤灯对硅片进行扫描处理。电学和结构测量表明,在无任何明显扩散而又能对晶格损伤进行良好恢复的情况下,就可使注入杂质全部激活。而且满足二个关键工艺要求:从硅片的一边到另一边薄层电阻的均匀性很高(标准偏移3.5％);没有引起硅片翘曲。
We introduced a very simple annealing system. The system uses only two 150W halogen lamps to scan the silicon wafer. Electrical and structural measurements show that the implanted impurities can be fully activated without any significant diffusion and good recovery of lattice damage. It also meets two key process requirements: High uniformity of sheet resistance from one side of the wafer to the other (3.5% standard deviation); no warpage of the wafer.