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利用多层溅射技术制备了ＷＳｉ＿ｘ／Ｓｉ薄膜，然后测量其平面电阻的退火行为，发现平面电阻在６００－７００℃之间退火后有陡降，这对应于非晶ＷＳｉ＿ｘ薄膜中Ｗ＿５Ｓｉ＿３四角相的形成。ｘ射线衍射和慢正电子湮没测量也证实了这一点。认为薄膜电阻率的突变反映了导电机制的变化，它和薄膜结构的变化有很好的对应关系。
The WSi_x / Si thin films were prepared by multilayer sputtering, and then the sheet resistance of the WSi_x / Si thin films was measured. It was found that the sheet resistance decreased sharply after annealing at 600-700 ℃, corresponding to the tetragonal W_5Si_3 phase in the amorphous WSi_x films form. X-ray diffraction and positron annihilation measurements also confirm this. It is considered that the abrupt change of the film resistivity reflects the change of the conductive mechanism and has a good correspondence with the change of the film structure.