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A new electroluminescence device is fabricated by microwave plasma chemical vapour deposition system and electron beam vapour deposition system. It is comprised of highly doped silicon/diamond/boron/nitrogen-doped diamond/indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analysed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd·m 2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.
It is comprised of highly doped silicon / diamond / boron / nitrogen-doped diamond / indium tin oxide thin films. Effects of process parameters on morphologies and structures of the thin films are detected and analyzed by scanning electron microscopy, Raman spectrometer and x-ray photoelectron spectrometer. A direct-current (DC) power supply is used to drive the electroluminescence device. The blue light emission with a luminance of 1.2 cd M 2 is observed from this double-doped diamond thin film electroluminescence device at an applied voltage of 105 V.