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用晶体生长动力学考察了籽晶法气相生长C60单晶体的生长工艺，得出关键在于处理成核与长大两个因素之间的矛盾。对管状炉的温度场进行了重新设计，将冷端的最低温度点移至合适部位，有效地控制了成核的数目。通过不断地优化实验，经选出恰当的冷、热端温度及生长周期，生长出的C6。单晶的最大钱度超过6mm，且有较高的结晶品质。同一单晶的劳厄像显示出C60的生长暴露面有（111）和（100）两种。
The crystal growth kinetics was used to investigate the growth process of the single-crystal C60 single-crystal growth by the seed-based method. The key point was to deal with the contradiction between nucleation and growth. The temperature field of the tubular furnace was redesigned to shift the minimum temperature at the cold end to the appropriate location, effectively controlling the number of nucleations. By continually optimizing the experiment, C6 was grown by selecting the right cold and hot end temperature and growth cycle. The largest single crystal of more than 6mm, and have a higher crystalline quality. The Lao image of the same single crystal shows that there are two kinds of growth exposures of C60 (111) and (100).