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采用射频(RF)磁控反应溅射法在Si基底上制备了氮化铝(AlN)薄膜,利用X射线衍射(XRD)、傅立叶红外光谱(FTIR)、扫描电子显微镜(SEM)和纳米力学测试系统研究靶基距对AlN薄膜取向性、微结构、形貌和力学性能的影响。结果表明,靶基距较大时,形成的AlN薄膜为非晶态,薄膜表面较疏松;随着靶基距的减少,AlN薄膜变为多晶态,且具有(100)择优取向;随着靶基距的进一步减少,薄膜结晶质量变好,晶粒变大,薄膜变得更致密,择优取向也由(100)逐渐向(002)转变;靶基距较小时,AlN压电薄膜与基底结合得更牢固,而压电薄膜与基底结合的紧密程度对多层膜声表面波(SAW)器件性能优劣的影响至关重要。
Aluminum nitride (AlN) thin films were deposited on Si substrates by RF magnetron reactive sputtering. The films were characterized by XRD, FTIR, SEM and nano-mechanical tests The effect of target distance on the orientation, microstructure, morphology and mechanical properties of AlN films was investigated systematically. The results show that the AlN thin film is amorphous and the surface of the AlN thin film is loose when the target distance is large. The AlN thin film becomes polycrystalline with the preferred orientation of (100) as the target distance decreases. The further reduction of the target distance between the AlN piezoelectric film and the substrate resulted in a better crystalline quality of the film, a larger grain size, a more dense film, and a more preferred orientation from (100) to (002) The combination of the piezoelectric film and the substrate tightness is crucial for the performance of multilayer SAW devices.