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用透射电镜等手段观察了硅片背面原始软损伤及它在工艺热过程中的变化。分析了软损伤吸杂的作用机构 :当热氧化时软损伤诱生热氧化层错 ,当外延生长时软损伤诱生半环形位错 ,硅片表面电活性区的有害杂质被吸收、沉积在这些诱生缺陷上。
Transmission electron microscopy and other means of observation of the back of the original silicon wafer soft damage and process changes in the process of heat. The mechanism of gettering of soft damage is analyzed. When thermal oxidation is induced by soft damage, the thermal oxide layer is induced. When the epitaxial growth, the soft damage induces semicircular dislocation. The harmful impurities in the surface active area of silicon are absorbed and deposited These induced defects.