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设计并研制了用于光电集成(OEIC)的InP基异质结双极晶体管(HBT),介绍了工艺流程及器件结构。分别采用金属有机化学气相沉积(MOCVD)及分子束外延(MBE)生长的外延片,并在外延结构、工艺流程相同的条件下,对两种生长机制的HBT直流及高频参数进行和分析。结果表明,采用MOCVD生长的InP基HBT,直流增益为30倍,截止频率约为38GHz;MBE生长的HBT,直流增益达到100倍,截止频率约为40GHz。这表明,MBE生长的HBT外延层质量更高,在相同光刻条件下,所对应的HBT器件的性能更好。
InP-based heterojunction bipolar transistor (HBT) for optoelectronic integration (OEIC) was designed and developed. The process flow and device structure were introduced. The epitaxial wafers grown by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were used to analyze and analyze the HBT DC and high frequency parameters of the two growth mechanisms under the same epitaxial structure and technological process. The results show that the InP-based HBT grown by MOCVD has a DC gain of 30 times and a cut-off frequency of about 38 GHz. The HBT grown by MBE has a DC gain of 100 times and a cut-off frequency of about 40 GHz. This indicates that the quality of the HBT epitaxial layer grown by MBE is higher, and the performance of the corresponding HBT device is better under the same lithography conditions.