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势垒二极管是一种三层硅结构,其中间层厚度约为150nm。此种类型之二极管的电特性是由中间层的势垒控制的。对这些结构的测量表明它们有一个非常灵敏的温度效应。在一定的温度范围内其温度灵敏度与热敏电阻的温度灵敏度是可以相比拟的,而比传统硅器件所看到的要大许多。出现较高温度灵敏度的温度范围可以用工艺参数及电参数的方法(例如电流密度)来改变。这一结构的一维模型表明这种较高的温度灵敏度是基于中间层中势能极小值中的可动载流子贮存。这些热产生的可动载流子之空间电荷部分地补偿了掺杂原子的空间电荷。这导致了由于温度引起的势垒压缩因而对于这些器件的电特性便有一个很强的温度影响。
The barrier diode is a three-layer silicon structure with an interlayer thickness of about 150 nm. The electrical characteristics of this type of diode are controlled by the barrier of the middle layer. The measurement of these structures shows that they have a very sensitive temperature effect. Its temperature sensitivity is comparable to the temperature sensitivity of a thermistor over a range of temperatures, much larger than what conventional silicon devices have seen. The temperature range at which higher temperature sensitivities occur can be varied using the process and electrical parameters (such as current density). The one-dimensional model of this structure shows that this higher temperature sensitivity is based on the storage of movable carriers in the potential minimum in the middle layer. The space charges of these thermally-generated moveable carriers partially compensate for the space charge of the dopant atoms. This results in a temperature-induced barrier compression that has a strong temperature effect on the electrical characteristics of these devices.