采用等离子体辉光放电的方法,使用SiCl_4和N_2代替通常方法中的SiH_4和NH_3,在500～800℃淀积出Si_3N_4薄膜。折射率为2.0,在浓HF 中腐蚀速率为150(?)/分,红外吸收光谱分析指明,该薄膜在11.(?)μ处有一特征吸收峰。本方法所用材料成本低、安企、低毒、易提纯,反应中因为有氯存在,发现有强烈的杂质萃取作用,有利于减少漏电。 Using plasma glow discharge method, SiCl 4 and N 2 were used instead of SiH 4 and NH 3 in common method to deposit Si 3 N 4 thin film at 500-800 ℃. The refractive index was 2.0 and the corrosion rate was 150 (?) / Min in concentrated HF. Infrared absorption spectroscopy indicated that the film had a characteristic absorption at 11. The material used in the method has the advantages of low cost, high safety, low toxicity and easy purification because of the presence of chlorine in the reaction and strong impurity extraction effect, which is beneficial to reduce leakage.