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,Measurement of GaN/Ge(001)Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy
【作 者】
：
【机 构】
：
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sci
【出 处】
：
中国物理快报（英文版）
【发表日期】
：
2010年6期
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