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The optical properties of porous silicon(PS) samples fabricated by pulse etching in a temperature range from-40 to 50-C have been investigated using reflectance spectroscopy,photoluminescence spectroscopy,and scanning electron microscopy(SEM).The dependence of the optical parameters,such as the refractive index n and the optical thickness(nd) of PS samples,on the etching temperature has been analyzed in detail.As the etching temperature decreases,n decreases,indicating a higher porosity,and the physical thickness of PS samples also de-creases.Meanwhile,the reflectance spectra exhibit a more intense interference band and the interfaces are smoother.In addition,the intensity of the PL emission spectra is dramatically increased.
The optical properties of porous silicon (PS) samples fabricated by pulse etching in a temperature range from-40 to 50-C have been investigated using reflectance spectroscopy, photoluminescence spectroscopy, and scanning electron microscopy (SEM). The dependence of the optical parameters, such as the refractive index n and the optical thickness (nd) of PS samples, on the etching temperature has been analyzed in detail. As the etching temperature decreases, n decreases, indicating a higher porosity, and the physical thickness of PS samples also de -creases.Meanwhile, the reflectance spectra exhibit a more intense interference band and the interfaces are smoother. In addition, the intensity of the PL emission spectra is dramatically increased.