【摘 要】
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Some deep levels induced by electron irradiation in oxygen-doped semi-insulating polycrystalline silicon (SIPOS) have been found and studied by using DLTS measu
【机 构】
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华东师范大学,华东师范大学,复旦大学
论文部分内容阅读
Some deep levels induced by electron irradiation in oxygen-doped semi-insulating polycrystalline silicon (SIPOS) have been found and studied by using DLTS measurements in conjunction with the C-V method. Experimental results show that when the irradiation energy is changed, the introduction rates are varied, Its porsible effects on S1POS used as a field shielding passivant for high-voltage semiconductor devices are also discussed.
Some deep levels induced by electron irradiation in oxygen-doped semi-insulating polycrystalline silicon (SIPOS) have been found and studied by using DLTS measurements in conjunction with the CV method. Experimental results show that when the irradiation energy is changed, the introduction rates are varied, Its porsible effects on S1POS used as a field shielding passivant for high-voltage semiconductor devices are also discussed.
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