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本文详细叙述了多层W-Si薄膜的制备技术、生长速率、热退火对薄膜性能的影响,薄膜与GaAs衬底间的界面行为等。
In this paper, the fabrication technology of multi-layer W-Si thin films, the growth rate, the effect of thermal annealing on the properties of the films and the interfacial behavior between the films and GaAs substrates are described in detail.