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本文利用自编P3D3V PIC程序,数值研究了BJ32矩波导传输TE10模式高功率微波在介质窗内、外表面引发的次级电子倍增过程,给出了次级电子3维空间位置分布特征、介质窗表面法向静电场分布规律以及电子数密度分布特性.模拟结果表明:对于介质窗内侧,微波强场区域率先进入次级电子倍增过程;而对于介质窗外侧,则是微波弱场区域优先进入次级电子倍增过程.形成机理可以解释为:微波坡印廷矢量方向与介质窗外表面法向相同而与内表面法向相反,内侧漂移运动导致强场区域电子易于被推回表面,有利于次级电子倍增优先形成;外侧漂移运动导致强场区域电子易于被推离表面,不利于次级电子倍增形成.准3维模型相对1维模型:介质窗内侧次级电子倍增过程中,次级电子倍增进入饱和时间长、饱和次级电子数目少、平均电子能量高、入射微波功率低、沉积功率低;介质窗外侧次级电子倍增过程中,次级电子倍增进入饱和时间短、饱和次级电子数目少、平均电子能量低、入射微波功率低、沉积功率低.沉积功率与入射微波功率比值与微波模式、强度及介质窗内外侧表面关系不大,准3维和1维模型计算结果均在1%—2%左右水平.
In this paper, the self-made P3D3V PIC program was used to numerically study the secondary electron multiplication induced by BJ32 rectangular wave guided TE10 mode high power microwave on the inner and outer surfaces of the dielectric window. The location distribution of the secondary electrons in the three- The surface normal electrostatic field distribution and electron density distribution.The simulation results show that for the inner side of the dielectric window, the microwave strong field region first enters the secondary electron multiplication process, while for the dielectric window outer side, Stage electron multiplication process.The formation mechanism can be explained as follows: the direction of the microwave Poynting vector is the same as the normal direction of the outer surface of the dielectric window and the normal direction of the inner surface, the inner drift movement causes the electrons in the strong field to be easily pushed back to the surface, And the electron multiplication is preferentially formed.Due to lateral drift movement, electrons in the strong field are easily pushed away from the surface, which is not conducive to the formation of secondary electron multiples.Major 3-D model Relative 1-D model: In the secondary electron multiplication of the dielectric window, the secondary electron multiplication The saturation time is long, the number of saturated secondary electrons is small, the average electron energy is high, the incident microwave power is low and the deposition power is low; the dielectric window In the process of secondary electron multiplication, the secondary electron multiplication has a short saturation time, a small number of saturated secondary electrons, a low average electron energy, a low incident microwave power and a low deposition power. The ratio of deposited power to incident microwave power and microwave mode, And the dielectric window on the outside surface of the relationship between the quasi-three-dimensional and one-dimensional model are calculated results are about 1% -2% level.