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在小信号S参数不适于微波功率放大器的设计而大信号S参数不易获得的情况下,利用ADS软件,采用负载牵引法和输入端共轭匹配,成功的设计出AlGaN/GaN HEMT微波功率放大器。为了解决晶体管端口出现负阻的问题,设计了输入输出端并联电阻和反馈网络两种方法,最后得到理想的结果为:工作绝对稳定,带宽3.6GHz～8.0GHz,最高增益11.04dB,最大输出功率33dBm,最大PAE达到29.2%,电压驻波比较小。
The AlGaN / GaN HEMT microwave power amplifier has been successfully designed by using ADS software and load-pull method and input-side conjugate matching when the small-signal S-parameters are not suitable for the design of microwave power amplifier and the large-signal S-parameters are not easily available. In order to solve the negative resistance problem of the transistor port, two methods of parallel resistance and feedback network are designed. The result is as follows: the work is absolutely stable, the bandwidth is 3.6GHz ~ 8.0GHz, the highest gain is 11.04dB, the maximum output power 33dBm, the maximum PAE reached 29.2%, the voltage standing wave is relatively small.