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采用考虑电子散射、俘获、输运和自洽场的三维数值模型,模拟了低能非聚焦电子束照射接地SiO_2薄膜的带电效应.结果表明,由于电子的迁移和扩散,电子会渡越散射区域产生负空间电荷分布.空间电荷呈现在散射区域内为正,区域外为负的交替分布特性.对于薄膜负带电,电子会输运至导电衬底形成泄漏电流,其暂态过程随泄漏电流的增加趋于平衡.而正带电暂态过程随返回二次电子的增多而趋于平衡.在平衡态时,负带电表面电位随薄膜厚度、陷阱密度的增大而降低,随电子迁移率、薄膜介电常数的增大而升高;而正带电表面电位受它们影响较小.
The three-dimensional numerical model considering the electron scattering, capture, transport and self-consistent fields was used to simulate the charging effect of low-energy non-focused electron beam to ground SiO 2 film. The results show that due to electron migration and diffusion, Negative space charge distribution. The space charge exhibits an alternating distribution characteristic of positive and negative outside of the scattering region. For the negative charge of the film, the electrons are transported to the conductive substrate to form a leakage current. The transient process increases with the leakage current Tends to balance, while the positive charge transient process tends to balance with the increase of secondary electrons, and in equilibrium state, the negatively charged surface potential decreases with the increase of film thickness and trap density. With the electron mobility, The electrical constant increases and increases; while the positively charged surface potential is less affected by them.