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提出一种新型的半导体光学放大器结构 ,并从增益谱和能带结构等角度分析其特征 ,得出其大带宽内偏振不灵敏的原因和规律 .通过剖析该结构中有源区各部分的作用 ,得出大的张应变的引入主要是用于提高 TM模的材料增益 ,获得偏振不灵敏和大的 TE模带宽 ,减小制备难度 .厚的无应变层的引入主要是为了改善有源层晶体质量 ,获得大的偏振不灵敏模式增益 .
A novel structure of semiconductor optical amplifier is proposed and its characteristics are analyzed from the view of gain spectrum and band structure, and the reasons and rules of polarization insensitivity in large bandwidth are obtained. By analyzing the function of each part of the active region in the structure, , It is concluded that the introduction of large tensile strain is mainly used to increase the material gain of TM mode, to obtain the polarization insensitivity and large TE mode bandwidth, and to reduce the preparation difficulty. The introduction of thick unstrained layer is mainly for improving the active layer Crystal quality, gain large polarization insensitive mode gain.