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主要介绍了近年来国内外出现的有市场推广潜力的立方相碳化硅(3C-SiC)MEMS器件,详细描述了其中一些典型器件的基本结构、加工工艺及初步测试结果,并指出了要想提高器件的可靠性,需要获得低残余应力、低应力梯度的薄膜材料,应当采用合适的刻蚀方法,还需保证金属与碳化硅欧姆接触的稳定性,同时高温引线键合与封装工艺亦不能忽视。随着材料生长和加工成本的不断降低,3C-SiC基MEMS器件将会逐步走向商品化。
This paper mainly introduces the domestic market of cubic phase silicon carbide (3C-SiC) with market potential in recent years. The basic structure, processing technology and preliminary test results of some typical devices are introduced in detail. The reliability of the device, the need to obtain low residual stress, low stress gradient thin film material, should adopt the appropriate etching method, but also to ensure the stability of the metal and silicon carbide ohmic contact, while high temperature wire bonding and packaging process can not be ignored . As material growth and processing costs continue to decline, 3C-SiC-based MEMS devices will be gradually commercialized.