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Gallium nitride-(GaN) based high electron mobility transistors(HEMTs) provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid(DNA) hybridization. The Au-gated AlInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current(V_(DS) = 0.5 V) shows a clear decrease of 69μA upon the introduction of 1μmolL~(-1)(μM) complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge.
Gallium nitride- (GaN) based high electron mobility transistors (HEMTs) provide a good platform for biological detection. In this work, both Au-gated AlInN / GaN HEMT and AlGaN / GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid The Au-gated AlInN / GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN / GaN HEMT biosensor. For the former, the drain-source current (V DSDS = 0.5 V) the introduction of 1 μmol L -1 (μM) complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a not able indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN / GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge.