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利用溶胶凝胶-旋涂的方法制备得到3%、6%和9%不同W掺杂量的Ti-SnO_2电极。W掺杂的SnO_2涂层均匀的覆盖在基片上,电极表面无明显的龟裂纹。W掺杂能提高Ti-SnO_2电极的导电性,同时会降低涂层电极的析氧过电位,3%W掺杂的Ti-SnO_2电极的析氧过电位约为2.3V。利用计时电位法测定电极的寿命,3%W掺杂的Ti-SnO_2电极寿命最长,导致W掺杂Ti-SnO_2电极失效的主要原因是致密TiO2层的形成。
The Ti-SnO 2 electrodes with different W doping amount of 3%, 6% and 9% were prepared by sol-gel-spin coating. The W-doped SnO 2 coating evenly covers the substrate without obvious crack on the electrode surface. W doping can improve the conductivity of the Ti-SnO 2 electrode and reduce the oxygen evolution overpotential of the Ti-SnO 2 electrode. The oxygen evolution overpotential of the 3% W-doped Ti-SnO 2 electrode is about 2.3V. The lifetime of the electrode was measured by chronopotentiometry, and the life span of 3% W doped Ti-SnO 2 electrode was the longest. The main reason for the failure of W-doped Ti-SnO 2 electrode was the formation of dense TiO 2 layer.