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用高频电容——电压法(H—C—V)研完了 GD—a—si∶H 的隙态密度,得到了平带到耗尽范围内的隙态密度分布,研究了 a—Si∶H 的电子亲和势 qx_a=3.35ev 及 a—Si∶H/n—C—Si 异质结能带图.
The gap density of GD-a-si: H was studied by high-frequency capacitance-voltage method (H-C-V) to obtain the gap density distribution in the flat zone to the depletion range. H electron affinity qx_a = 3.35ev and a-Si: H / n-C-Si heterojunction band diagram.