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对用电沉积方法制备的铜铟硒、银铟硒和金铟硒半导体薄膜在阴极还原H2O2时产生的（光）电化学振荡现象进行了对比性的分析与研究．特别是对它们的振荡形式、起振条件、外界影响因素及光电调制等进行了归纳，较系统地总结了IB族元素与In，Se构成的三元半导体化合物薄膜的电化学振荡的基本特点．
Electrochemical oscillations of (light) generated by cathodic reduction of H2O2 with copper indium selenide, silver indium selenide and gold indium selenide semiconducting thin films prepared by electrodeposition were analyzed comparatively. In particular, the basic characteristics of the electrochemical oscillation of ternary semiconductor compound thin films composed of group IB elements and In and Se are systematically summarized in terms of their oscillation modes, starting conditions, external influencing factors and photoelectric modulation.