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作者用4Cr5MoVlSi及3Cr2W8V两种热模具钢试样进行了等离子体增强化学气相沉积(PCVD)TiN的工艺试验,探讨了PCVD TiN工艺参数对膜基结合强度、硬度和结构的影响。结果表明,在比常规化学气相沉积(CVD)方法低得多的温度下,就能得到TiN沉积层。还用X射线衍射法对沉积层的结构进行了分析;用划痕法对不同工艺参数下得到的TiN沉积层与基体的结合强度(用临界负荷表示)进行了研究。
The authors used the plasma enhanced chemical vapor deposition (PCVD) TiN process test of 4Cr5MoVlSi and 3Cr2W8V two hot die steel samples to explore the impact of PCVD TiN process parameters on the film-based bonding strength, hardness and structure. The results show that TiN deposits can be obtained at much lower temperatures than conventional CVD methods. The structure of the deposited layer was also analyzed by X-ray diffraction. The bond strength (expressed as critical load) of the TiN deposited layer and the substrate obtained under different process parameters was studied by scratch test.