论文部分内容阅读
硅烯是由单层硅原子形成的二维蜂窝状晶格结构,具有石墨烯类似的电学性质,由于硅烯中存在比较强的自旋轨道耦合而备受关注.本文利用非平衡格林函数方法研究了门电压控制的硅烯量子线中电子输运性质和能带结构.研究发现,只有在较强的门电压下,而且硅烯量子线具有较好的锯齿形或扶手椅形边界而不存在额外硅原子时,硅烯量子线中才存在无能隙的自旋极化边缘态.另外,计算结果表明这种门电压控制的硅烯量子线中边缘态在每个能谷处自旋是极化的.这些计算结果将为实验上利用电场制作硅烯纳米结构提供理论支持.
Silicone is a two-dimensional honeycomb lattice formed by single-layer silicon atoms, which has the similar electrical properties of graphene and attracts much attention due to the strong spin-orbit coupling in the silylene.In this paper, we use the non-equilibrium Green’s function The electron transport properties and band structures of the gate voltage controlled silylene quantum wires have been studied. The results show that only with a strong gate voltage, the silylene quantum wires have better zigzag or armchair-shaped boundaries In the presence of extra silicon atoms, there exists a gapless spin-polarized edge state in the silylene quantum wires.In addition, the calculated results show that the gate-voltage controlled silylene quantum wire spin in each energy valley is Polarization.These results will provide theoretical support for the experimental use of electric field production of silicon nanostructures.