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以Ｘ射线衍射统计动力学为基础，讨论了一种用Ｘ射线截面形貌图测定静态Ｄｅｂｙｅ－Ｗａｌｌｅｒ因子的方法．通过仔细分析截面形貌图中Ｐｅｎｄｅｌｌｓｕｎｇ干涉条纹振荡周期和强度的变化，得到了经热处理后的ＣＺ硅和ＭＣＺ硅单晶样品的静态Ｄｅｂｙｅ－Ｗａｌｌｅｒ因子，并求得样品中氧沉淀的浓度和平均尺寸．这种定量化的研究方法为揭示晶体中微缺陷的性质及形成机理提供了新途径．
Based on the statistical kinetics of X-ray diffraction, a method of determining the static Debye-Waller factor by X-ray cross section topography is discussed. The static Debye-Waller factor of CZ silicon and MCZ silicon single crystal samples after heat treatment was obtained through careful analysis of Pendellsung interference fringes oscillation cycle and intensity changes, and the oxygen precipitation concentration and average size. This quantitative research method provides a new way to reveal the nature and formation mechanism of micro-defects in the crystal.