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文章叙述了用于■_e静止质量测量的大面积离子注入氚源的制备原理、方法和装置,通过实验选择了合适的离子注入条件,分析了离子注入氚源的强度、均匀性、注入深度及氚的逃逸等特性。
The article describes the preparation principle, method and device for large-area ion implantation tritium source used for the measurement of ■ _e static quality. The suitable ion implantation conditions are selected by experiment, and the intensity, uniformity, depth of implantation and Tritium escape and other characteristics.