RBS ANALYSIS OF DAMAGE AND ANNEALING OF ION IMPLANTED InP:Fe

来源 :Nuclear Science and Techniques | 被引量 : 0次 | 上传用户：rilson

【摘要】

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Rutherford backscattering spectroscopy (RBS) with channeling technique has been used to analyze the damage and its annealing of Si+ and P+ implanted InP:Fe. 150

【作者】

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沈鸿烈杨根庆周祖尧邹世昌

【机构】

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ShanghaiInstituteofMetallurgyAcademiaSi.nicaShanghai200050China,ShanghaiInstituteofMetallurgyAcademi

【出处】

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Nuclear Science and Techniques

【发表日期】

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1990年Z1期

【关键词】

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INP ION IMPLANTATION RBS ANALYSIS DAMAGE InP Ion implantation RBS analysis Damag

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Rutherford backscattering spectroscopy (RBS) with channeling technique has been used to analyze the damage and its annealing of Si+ and P+ implanted InP:Fe. 150 keV Si ions and 160 keV P ions were implanted with doses ranging from 1×1013 to 1×10

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