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新型磁盘存储材料Eu_2PdSi_3单晶制备由于Eu的挥发问题一直是一个难点。本文采用光辐射加热悬浮区熔法尝试制备了Eu_2PdSi_3单晶。采用标准化学成分配比制备给料棒,制备出的Eu_2PdSi_3晶体为胞状晶,分析是由于熔区成分发生变化,发生成分过冷导致胞状组织;采用给料棒成分调整法成功生长出大块Eu_2PdSi_3晶体。研究发现,采用3 MPa循环Ar气并不能完全抑制Eu在高温下的挥发,继续增大保护气体的压强配合给料棒成分调整,有利于解决Eu元素的挥发问题。
The new disk storage material Eu2PdSi_3 single crystal preparation due to the volatilization of Eu has been a difficult problem. In this paper, Eu2PdSi_3 single crystals were prepared by the irradiation of the suspension region by optical irradiation. The feed rod was prepared by standard chemical composition. The prepared Eu2PdSi3 crystal was cellular crystal. The analysis was due to the change of melting zone composition and the occurrence of overcooling, leading to cellular structure. The bulk Eu2PdSi3 crystal was successfully grown by feed rod composition adjustment Crystal. The results show that using Ar gas at 3 MPa can not completely suppress the volatilization of Eu at high temperature, and further increase the pressure of the shielding gas to adjust the composition of the feed rod, which is beneficial to solve the problem of volatilization of Eu.