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本文从二极管类型、器件组成和单元结构综述了1D1R型阻变存储器的研究进展。二极管可分为硅基二极管、氧化物二极管(p-n结型、肖特基型)和聚合物二极管。硅基二极管性能优异,但制备温度高,不利于集成;氧化物二极管易制备,且与CMOS工艺兼容,但正向电流密度不足;聚合物二极管虽然性能较差,但易于大面积制备,柔性好。单元结构可分为1D1R、1D2R和Bi-1D1R。1D1R研究最为广泛,但不适用于双极型阻变介质,1D2R和Bi-1D1R型可适用于双极型阻变介质。分析静态和柔性下的器件表明:阻变介质和制备方法对于存储器的性能有较大影响,柔性1D1R型阻变存储器已经具备了一定的抗弯扭、卷绕能力,其柔性主要受到基底性质、膜层间粘附力、杨氏模量差、材料属性等影响。
In this paper, the research progress of 1D1R type resistance change memory is reviewed from the diode type, device composition and cell structure. Diode can be divided into silicon-based diodes, oxide diodes (p-n junction, Schottky type) and polymer diodes. Silicon-based diodes have excellent performance, but the preparation temperature is high, which is not conducive to integration. The oxide diodes are easy to prepare and compatible with CMOS technology, but the forward current density is not enough. Although the performance of polymer diodes is poor, they are easy to be prepared in large area and flexible . The cell structure can be divided into 1D1R, 1D2R and Bi-1D1R. 1D1R is the most widely studied, but not suitable for bipolar resistive media. The 1D2R and Bi-1D1R types are suitable for bipolar resistive media. The analysis of devices under static and flexible conditions shows that the resistive media and the preparation method have a great influence on the performance of the memory. The flexible 1D1R resistive memory has a certain resistance to torsional twisting and winding, its flexibility is mainly affected by the substrate properties, Film adhesion, Young’s modulus difference, material properties and other effects.