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研究了平面磁控直流反应溅射法沉积氧化铝薄膜的过程。结果表明氧分压大小对反应溅射过程有决定性作用,当氧分压增大或减小过程中存在两个阈值。氧分压小于阈值为金属Al溅射区,大于阈值为氧化铝溅射区。在阈值附近总气压、溅射电压和沉积速率发生突变,溅射特性(V-J)曲线有不同规律。沉积的氧化铝膜为非晶态,高温下可晶化,本文还讨论了反应溅射的机理。
The process of depositing alumina film by planar magnetron DC reactive sputtering was studied. The results show that the partial pressure of oxygen has a decisive effect on reactive sputtering. There are two thresholds when the partial pressure of oxygen increases or decreases. The partial pressure of oxygen is less than the threshold for the metal Al sputtering zone, which is greater than the threshold for the alumina sputtering zone. The total pressure, the sputtering voltage and the deposition rate abruptly change near the threshold, and the sputtering characteristic (V-J) curve has different laws. The deposited alumina film is amorphous and crystallizable at high temperatures. The mechanism of reactive sputtering is also discussed in this paper.