论文部分内容阅读
将新器件结构与新型半导体材料相结合,提出了一种新型的n-区三层渐变掺杂理想欧姆接触型p+(SiGeC)-n--n+异质结功率二极管,并对n-区的杂质分布梯度进行了优化.基于MEDICI,给出了该结构的关键物理参数模型,并在此基础上对新结构的设计思路和工作原理进行了全面分析.结果表明,与常规理想欧姆接触结构相比,该新结构在保持快而软反向恢复特性的前提下,反向阻断电压增加了近一倍,而且正向通态特性也有所改善,很好地实现了功率二极管中Qs-Vf-Ir三者的良好折中.
A novel n - region three - layer graded doped ideal ohmic contact type p + (SiGeC) - n - n + heterojunction power diode is proposed by combining the structure of the new device with the new type of semiconductor material. Based on MEDICI, the key physical parameter model of this structure is given, and on the basis of this, a comprehensive analysis of the design idea and working principle of the new structure is given. The results show that, compared with the conventional ideal ohmic contact structure Than the new structure in maintaining fast and soft reverse recovery under the premise of the reverse blocking voltage increased nearly doubled, and the positive on-state characteristics also improved, well achieved power diode Qs-Vf -Ir a good compromise between the three.