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本文利用脉冲激光沉积技术在(LaAlO3)0.3(Sr2AlTaO6)0.7(001)衬底上生长了BiFe1-xMnxO3(x=0～5%)外延薄膜,研究了Mn掺杂对BiFeO3(BFO)薄膜结构、铁电特性和漏电流的影响.XRD和SEM结果表明薄膜具有良好的结晶质量.漏电流测量显示Mn掺杂有效地减小了BFO薄膜的漏电流密度,因而在室温下5%Mn掺杂的BFO薄膜能够获得饱和的电滞回线.XPS分析证明,Mn掺杂改善BFO薄膜性能的可能原因在于其极大地减少了BFO薄膜中的Fe2+离子.
In this paper, a BiFe1-xMnxO3 (x = 0 ~ 5%) epitaxial film was grown on a (LaAlO3) 0.3 (Sr2AlTaO6) 0.7 (001) substrate by pulsed laser deposition. The effects of Mn doping on the structure, Ferroelectric characteristics and leakage current.XRD and SEM results show that the film has a good crystalline quality.The leakage current measurement shows that Mn doping effectively reduces the leakage current density of the BFO film and thus 5% Mn doped at room temperature BFO film can obtain saturated hysteresis loop.XPS analysis proves that Mn doping can improve the performance of BFO film probably because it greatly reduces the Fe2 + ions in the BFO film.