【摘 要】
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The light-induced reversible changes in I-V character of PIN a-Si:H solar cells are measured in a similar way to the study of S-W effect for a-Si:H films. It is
【机 构】
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山东大学物理系,山东大学物理系,山东大学物理系,山东大学物理系
论文部分内容阅读
The light-induced reversible changes in I-V character of PIN a-Si:H solar cells are measured in a similar way to the study of S-W effect for a-Si:H films. It is found that the forward character changes can be explained by the recombination current (m= 2 , I-exp(eV/mKT) mechanism, and the inverse one is dominated by the barrier-layer generation current (IG = eniX0/2τ). The results may be explained by the model for S-W effect recently suggested by Dai Guocai, et al.
The light-induced reversible changes in IV character of PIN a-Si: H solar cells are measured in a similar way to the study of SW effect for a-Si: H films. It is found that the forward character changes can be explained by the recombination current (m = 2, I-exp (eV / mKT) mechanism, and the inverse one is dominated by the barrier-layer generation current (IG = eniX0 / 2τ). The results may be explained by the model for SW effect recently suggested by Dai Guocai, et al.
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