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基于功率分配思想和简化实频法设计了频率为DC~20 GHz,承载功率为40 W的阵列型微波薄膜匹配负载器件;采用丝网印刷工艺和射频磁控溅射工艺制备了设计的Ta N薄膜匹配负载器件。研究了所制器件的性能,结果表明,在DC~23.6 GHz,电压驻波比均小于1.3。加载功率为8,18,40 W时,薄膜表面的最高温度分别为37.6,59.5,113.6℃。热成像测试结果表明,所设计器件的两个电阻膜温度基本一致,实现了功率的平均分配。
Based on the idea of power distribution and the simplified real-frequency method, an arrayed microwave thin film matched load device with a frequency of DC ~ 20 GHz and a carrying power of 40 W was designed. The designed Ta N was prepared by screen printing and RF magnetron sputtering Thin film matched load device. The performance of the device was investigated. The results show that the voltage standing wave ratio is less than 1.3 at DC ~ 23.6 GHz. When the loading power is 8, 18, 40 W, the maximum surface temperature of the film is 37.6, 59.5, 113.6 ℃ respectively. The results of the thermal imaging test show that the temperature of the two resistance films of the designed device is basically the same, and the average power distribution is achieved.