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利用YAG脉冲激光器 (脉宽为 1 0ns ,波长为 1 .0 6μm)对砷注入长波碲镉汞样品进行激光退火 ,分析离子注入及激光退火引起的样品电学性质的变化 ;通过对电导率 -迁移率谱的研究 ,发现激光退火能够消除辐射损伤 ,并激活注入杂质 .
The long-wavelength mercury arsenide (HgCdTe) samples were laser annealed by YAG pulsed laser (pulse width of 10 ns and wavelength of 1.06 μm), and the changes of electrical properties of the sample caused by ion implantation and laser annealing were analyzed. The frequency spectrum of the study found that laser annealing can eliminate radiation damage, and activate the injection of impurities.